NSN 5961-00-187-9756

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-187-9756 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: S3BR8F, S3BR8F, 5961-00-187-9756, 00-187-9756, 5961001879756, 001879756

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59SEP 08, 197200-187-975662108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-187-9756
Part Number Cage Code Manufacturer
S3BR8F14099SEMTECH CORPORATION
S3BR8FSH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-00-187-9756
Characteristic Specifications
SPECIAL FEATURESSILICON,3 PHASE FULL WAVE BRIDGE,800V PEAK INVERSE VOLTAGE,2 AMP AVERAGE RECITIFED CURRENT AT 55 DEG C AND 1.2 AMP AT 100 DEG C,MAX REVERSE CURRENT AT PEAK INVERSE VOLTAGE IS 3 UA AT 25 DEG C AND 60 UA AT 100 DEG C,RECURRENT SURGE AT 25 DEG C IS 10 AMP,FAST REVERSE RECOVERY TIME,M55.0 TO P150.0 DEG C OPERATING TEMP,5 SOLID SILVER LEADS,DIM. OF LEADS 0.031 IN. DIA,0.875 IN. MIN LG;MOLDED CASE IS 1.000 IN. LG;0.420 IN. W;0.180 IN. H