NSN 5961-00-189-3301

Part Details | TRANSISTOR

5961-00-189-3301 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 007014500, 007-0145-00, 007014500, 007-0145-00, MFE3002N, MFE3002, MFE3002, 48P10961D001, MFE3002, 9500452002, 95-00452-002, 5961-00-189-3301, 00-189-3301, 5961001893301, 001893301

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 03, 197100-189-330120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-189-3301
Part Number Cage Code Manufacturer
007-0145-0012115DRS ICAS, LLC
007-0145-0004713FREESCALE SEMICONDUCTOR, INC.
MFE3002N04713FREESCALE SEMICONDUCTOR, INC.
MFE300204713FREESCALE SEMICONDUCTOR, INC.
MFE300207688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
48P10961D00194990MOTOROLA INC.DBA INTEGRATED INFORMATION SYSTEMS
MFE30025V1P1ON SEMICONDUCTOR CORPORATION
95-00452-00200724RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-189-3301
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD30.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAG300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE