NSN 5961-00-190-6087

Part Details | TRANSISTOR

5961-00-190-6087 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 3520605011, 352-0605-011, 3520605011, 352-0605-011, 2N2608, 3520605011, 352-0605-011, 2N2608, 3520605011, 352-0605-011, 2N2608, 5961-00-190-6087, 00-190-6087, 5961001906087, 001906087

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 03, 197100-190-608720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-190-6087
Part Number Cage Code Manufacturer
352-0605-01113499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
352-0605-01117856SILICONIX INCORPORATEDDIV SILICONIX
2N260817856SILICONIX INCORPORATEDDIV SILICONIX
352-0605-01121845SOLITRON DEVICES, INC.
2N260821845SOLITRON DEVICES, INC.
352-0605-01115818TELCOM SEMICONDUCTOR INC
2N260815818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-190-6087
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAD4.50 MICROAMPERES MAXIMUM AND AK10.00 MICROAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF300.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.190 INCHES NOMINAL
OVERALL DIAMETER0.219 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE