NSN 5961-00-192-1881
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-192-1881 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 2595D10292, 2595D1029-2, 2595D10292, 2595D1029-2, DT70616G, 5961-00-192-1881, 00-192-1881, 5961001921881, 001921881
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 31, 1969 | 00-192-1881 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-192-1881
Part Number | Cage Code | Manufacturer |
---|---|---|
2595D1029-2 | 94117 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
2595D1029-2 | 87557 | LOCKHEED CORPLOCKHEED ELECTRONICS CO INC |
DT70616G | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-00-192-1881
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 NOMINAL NOMINAL REGULATOR VOLTAGE |
VOLTAGE TOLERANCE IN PERCENT | M1.0/P1.0 |
CURRENT RATING PER CHARACTERISTIC | AS50.00 MILLIAMPERES NOMINAL |
POWER RATING PER CHARACTERISTIC | AF500.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.098 INCHES NOMINAL |
FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
FEATURES PROVIDED | BURN IN AND HERMETICALLY SEALED CASE |