NSN 5961-00-199-5912
Part Details | TRANSISTOR
5961-00-199-5912 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N3880, 2N3880, RELEASE5119, 2N3880, 5961-00-199-5912, 00-199-5912, 5961001995912, 001995912
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 24, 1969 | 00-199-5912 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-199-5912
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N3880 | 96341 | COBHAM ADVANCED ELECTRONIC SOLUTIONSINC. |
| 2N3880 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5119 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3880 | 24446 | GENERAL ELECTRIC COMPANY |
Technical Data | NSN 5961-00-199-5912
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 2.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5119 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
