NSN 5961-00-211-1433

Part Details | TRANSISTOR

5961-00-211-1433 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: MFE2012, J106, 805161, QAP14, QAP14, 805161, MFE2012, J106, 5961-00-211-1433, 00-211-1433, 5961002111433, 002111433

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59APR 20, 197300-211-143320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-211-1433
Part Number Cage Code Manufacturer
MFE201204713FREESCALE SEMICONDUCTOR, INC.
J106Z5B11MILSPEC SERVICES PTY LIMITED
80516107342NAI TECHNOLOGIES INC
QAP1437338NAUTEL LIMITED
QAP1457655NAUTEL MAINE INC.
8051610VGU1NORTH ATLANTIC INDUSTRIES, INC.
MFE20125V1P1ON SEMICONDUCTOR CORPORATION
J10617856SILICONIX INCORPORATEDDIV SILICONIX
Technical Data | NSN 5961-00-211-1433
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC25.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAC50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB1.8 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.190 INCHES NOMINAL
OVERALL DIAMETER0.220 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP