NSN 5961-00-226-6790

Part Details | TRANSISTOR

5961-00-226-6790 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1032C, 2N1032B, RELEASE3905, 2N1032C, 2N1032B, 5961-00-226-6790, 00-226-6790, 5961002266790, 002266790

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196300-226-679020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-226-6790
Part Number Cage Code Manufacturer
2N1032C80131ELECTRONIC INDUSTRIES ASSOCIATION
2N1032B80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE390580131ELECTRONIC INDUSTRIES ASSOCIATION
2N1032C21845SOLITRON DEVICES, INC.
2N1032B21845SOLITRON DEVICES, INC.
Technical Data | NSN 5961-00-226-6790
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB1.50 AMPERES MAXIMUM AND AC15.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB90.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY1
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG
OVERALL LENGTH0.359 INCHES NOMINAL
OVERALL DIAMETER0.875 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE3905 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION