NSN 5961-00-227-4079

Part Details | TRANSISTOR

5961-00-227-4079 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N4391A, 2N4391, 43018901, 430189-01, 2N4391, 40666731, 40-666-731, 2N4391, U222, 2N4391, 2N4391, 2N4391, VF4391, 5961-00-227-4079, 00-227-4079, 5961002274079, 002274079

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 20, 197300-227-407920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-227-4079
Part Number Cage Code Manufacturer
2N4391AC7191ADELCO ELEKTRONIK GMBH
2N4391C7191ADELCO ELEKTRONIK GMBH
430189-0107690BAE SYSTEMS CONTROLS INC
2N439104713FREESCALE SEMICONDUCTOR, INC.
40-666-731K5294GE AVIATION SYSTEMS LTD
2N439117856SILICONIX INCORPORATEDDIV SILICONIX
U22217856SILICONIX INCORPORATEDDIV SILICONIX
2N439121845SOLITRON DEVICES, INC.
2N439115818TELCOM SEMICONDUCTOR INC
2N439101295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
VF439121066WAYNE KERR ELECTRONICS INC
Technical Data | NSN 5961-00-227-4079
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF1.8 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-18
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE