NSN 5961-00-227-9059

Part Details | TRANSISTOR

5961-00-227-9059 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5116A, 2N5116, 2N5116, RELEASE5850, 18550278, 1855-0278, 2N5116, 3520915030, 352-0915-030, 2N5116, VCR6P, U306, 2N5116, 99099452, 5961-00-227-9059, 00-227-9059, 5961002279059, 002279059

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 12, 196900-227-905920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-227-9059
Part Number Cage Code Manufacturer
2N5116AC7191ADELCO ELEKTRONIK GMBH
2N5116C7191ADELCO ELEKTRONIK GMBH
2N511680131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE585080131ELECTRONIC INDUSTRIES ASSOCIATION
1855-027828480HEWLETT-PACKARD COMPANYDBA HP
2N511612040NATIONAL SEMICONDUCTOR CORP
352-0915-03013499ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS
2N511617856SILICONIX INCORPORATEDDIV SILICONIX
VCR6P17856SILICONIX INCORPORATEDDIV SILICONIX
U30617856SILICONIX INCORPORATEDDIV SILICONIX
2N511621845SOLITRON DEVICES, INC.
99099452F6481THALES SA
Technical Data | NSN 5961-00-227-9059
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
POWER RATING PER CHARACTERISTICAB500.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5850 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION