NSN 5961-00-229-0288
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-229-0288 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1189R, 1N1189R, 1N1189R, 1N1189R, 1N1189R, 1N1189R, 1N1189R, 1N1189R, 1N1189R, 5961-00-229-0288, 00-229-0288, 5961002290288, 002290288
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | DEC 22, 1971 | 00-229-0288 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-229-0288
Part Number | Cage Code | Manufacturer |
---|---|---|
1N1189R | 04713 | FREESCALE SEMICONDUCTOR, INC. |
1N1189R | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP.DBA I R |
1N1189R | 07688 | JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL |
1N1189R | 59377 | MICROSEMI CORP-COLORADO |
1N1189R | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
1N1189R | 14321 | PD & E ELECTRONICS LLC |
1N1189R | 66844 | POWEREX, INC |
1N1189R | 11961 | SEMICON COMPONENTS INC |
1N1189R | 31338 | SEMITRONICS CORP |
Technical Data | NSN 5961-00-229-0288
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 0.6 MAXIMUM FORWARD VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | AF40.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF68.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | THREADED STUD |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNF |
NOMINAL THREAD SIZE | 0.250 INCHES |
TERMINAL TYPE AND QUANTITY | 1 SOLDER STUD AND 1 THREADED STUD |
OVERALL LENGTH | 1.453 INCHES NOMINAL |
OVERALL WIDTH ACROSS FLATS | 0.667 INCHES MINIMUM AND 0.687 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |