NSN 5961-00-229-5160
Part Details | TRANSISTOR
5961-00-229-5160 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5320, 2N5320A, 2N5320, 580167, 580-167, 580167, 580-167, SS201461, SS-20146-1, 2N5320, 8471020043, 847102-0043, RELEASE5779, 2N5320, 2N5320, 8471020043, 847102-0043, 2N5320, TBD, 2N5320, 3063924, 456669.0000P, 4-56669.0000//P, JAN2N5320, 2N5320, 2N5320, 4541571, 454157-1, 4541571, 454157-1, 4541571, 454157-1, 2N5320, 28 033004, 28 033-004, 2N5320, 11830765, 5961-00-229-5160, 00-229-5160, 5961002295160, 002295160
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 10, 1969 | 00-229-5160 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-229-5160
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5320 | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5320A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5320 | 1S926 | AMERICAN MICROSEMICONDUCTOR INC |
| 580-167 | 0PN68 | AMPEX DATA SYSTEMS CORPORATION |
| 580-167 | 92739 | AMPEX SYSTEMS CORP |
| SS-20146-1 | U2290 | BAE SYSTEMS INTEGRATED SYSTEMTECHNOLOGIES LTD |
| 2N5320 | 55464 | CENTRAL SEMICONDUCTOR CORP. |
| 847102-0043 | 55819 | DIAMOND ELECTRONICS INC |
| RELEASE5779 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5320 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5320 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 847102-0043 | 92325 | GENERAL DYNAMICS ADVANCEDINFORMATION SYSTEMS INC. |
| 2N5320 | 18714 | HARRIS CORPFINDLAY OPNS |
| TBD | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N5320 | 34371 | INTERSIL CORPORATIONDIV NA |
| 3063924 | 07421 | INTERSTATE ELECTRONICS CORPORATIONDBA L-3 INTERSTATE ELECTRONICS |
| 4-56669.0000//P | A0069 | LEONARDO S.P.A. A SECURITY &INFORION SYSTEM DIVISION |
| JAN2N5320 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N5320 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N5320 | 53711 | NAVAL SEA SYSTEMS COMMAND |
| 454157-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 454157-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 454157-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5320 | 26720 | RCA CORPNEW PRODUCTS DIV |
| 28 033-004 | D9853 | ROCKWELL COLLINS DEUTSCHLANDSERVICES GMBH |
| 2N5320 | 50891 | SEMICONDUCTOR TECHNOLOGY INCDBA S T I |
| 11830765 | 19200 | US ARMY ARDEC RDECOM |
Technical Data | NSN 5961-00-229-5160
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB10.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5779 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
