NSN 5961-00-229-7899
Part Details | TRANSISTOR
5961-00-229-7899 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DTG1200, DTG1200, 1190057, 119-0057, STG1200, 5961-00-229-7899, 00-229-7899, 5961002297899, 002297899
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 12, 1971 | 00-229-7899 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-229-7899
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DTG1200 | 16758 | GENERAL MOTORS CORPDELCO ELECTRONICS DIV |
| DTG1200 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
| 119-0057 | 85604 | KEPCO, INC. |
| STG1200 | 55718 | SYNTAR INDUSTRIES INC |
Technical Data | NSN 5961-00-229-7899
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAC120.0 MAXIMUM AND CAM1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC3.00 AMPERES NOMINAL AND BACCD15.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB106.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL AND UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 1 UNINSULATED WIRE LEAD AND 2 CASE |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |