NSN 5961-00-230-8000
Part Details | TRANSISTOR
5961-00-230-8000 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80064B, SC596100031, SC5961-0003-1, MEM517C, 5961-00-230-8000, 00-230-8000, 5961002308000, 002308000
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 24, 1970 | 00-230-8000 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-230-8000
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 80064B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| SC5961-0003-1 | 12115 | DRS ICAS, LLC |
| MEM517C | 14936 | GENERAL SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-230-8000
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAG25.0 MAXIMUM AND CAJ25.0 MAXIMUM AND CAX5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB450.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |