NSN 5961-00-230-8302
Part Details | TRANSISTOR
5961-00-230-8302 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5345, RELEASE5831, 2N5345, 2N5345, 2T0921, 2T092-1, 5961-00-230-8302, 00-230-8302, 5961002308302, 002308302
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | OCT 24, 1970 | 00-230-8302 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-230-8302
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5345 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5831 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5345 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N5345 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
2T092-1 | 22915 | NORTHROP GRUMMAN CORPELECTRONIC SYSTEMS DEFENSIVE SYSTEM |
Technical Data | NSN 5961-00-230-8302
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 300.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM AND AB500.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB40.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
OVERALL LENGTH | 0.340 INCHES MAXIMUM |
OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |