NSN 5961-00-231-9963

Part Details | TRANSISTOR

5961-00-231-9963 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 42957401, 429574-01, 2N5019, 2N5019, 2N5019, 2N5019, 2N5019, P1164, 5961-00-231-9963, 00-231-9963, 5961002319963, 002319963

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAY 27, 197300-231-996320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-231-9963
Part Number Cage Code Manufacturer
429574-0107690BAE SYSTEMS CONTROLS INC
2N501932293INTERSIL INCSUB OF GENERAL ELECTRIC CO
2N501927014NATIONAL SEMICONDUCTOR CORPORATION
2N501917856SILICONIX INCORPORATEDDIV SILICONIX
2N501921845SOLITRON DEVICES, INC.
2N501915818TELCOM SEMICONDUCTOR INC
P116415818TELCOM SEMICONDUCTOR INC
Technical Data | NSN 5961-00-231-9963
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAK10.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAF1.8 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT200.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONTO-18
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.210 INCHES MAXIMUM
OVERALL DIAMETER0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE