NSN 5961-00-232-3808
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-232-3808 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: P10212, P1021-2, P10212, P1021-2, 4791240005, 479-1240-005, 101000141, 810091001, 810091-001, 2503676201, 2503676-201, 5961PL0959887, MILS19500406, MIL-S-19500/406, MILPRF19500406, MIL-PRF-19500/406, JAN1N4464, 81901500165, 81-9015-0016-5, 10129865, ECG5018A, 1N5239, FBMZ197, 4801015239, 4801-01-5239, 5961-00-232-3808, 00-232-3808, 5961002323808, 002323808
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | OCT 26, 1970 | 00-232-3808 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-232-3808
Part Number | Cage Code | Manufacturer |
---|---|---|
P1021-2 | 25415 | ALLIED HEALTHCARE PRODUCTS INCGOMCO DIV |
P1021-2 | 62842 | ALLIED HEALTHCARE PRODUCTS, INC. |
479-1240-005 | 94756 | BOEING COMPANY, THEDBA BOEING |
101000141 | 34984 | DATA GENERAL CORPM/S 9S17 |
810091-001 | 53938 | EVANS & SUTHERLAND COMPUTERCORPORATION |
2503676-201 | 07187 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
5961PL0959887 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
MIL-S-19500/406 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MIL-PRF-19500/406 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN1N4464 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
81-9015-0016-5 | 12578 | MINNESOTA MINING AND MFG CO MINCOMDIV |
10129865 | A486G | NIMIKKEISTOKESKUS NCB FINLAND |
ECG5018A | 61636 | PHILIPS ECG INCDIV OF NORTH AMERICAN PHILIPS CORP |
1N5239 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
FBMZ197 | 80103 | VEECO INSTRUMENTS INCLAMBDA DIV |
4801-01-5239 | 23338 | WAVETEK U S INCDIV OF WAVETEK CORP |
Technical Data | NSN 5961-00-232-3808
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.1 NOMINAL NOMINAL REGULATOR VOLTAGE |
VOLTAGE TOLERANCE IN PERCENT | M5.0/P5.0 |
CURRENT RATING PER CHARACTERISTIC | EA157.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF1.5 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.106 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 406 GOVERNMENT SPECIFICATION |