NSN 5961-00-233-3849
Part Details | TRANSISTOR
5961-00-233-3849 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5181, RELEASE5595, 18540390, 1854-0390, 2N5181, 18540390, 1854-0390, 2N5181, 5961-00-233-3849, 00-233-3849, 5961002333849, 002333849
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 28, 1970 | 00-233-3849 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-233-3849
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5181 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5595 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1854-0390 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 2N5181 | 34371 | INTERSIL CORPORATIONDIV NA |
| 1854-0390 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| 2N5181 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-00-233-3849
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 3.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC50.00 MILLIAMPERES MAXIMUM AND AE1.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB180.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.164 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
