NSN 5961-00-233-7193

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-233-7193 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5165, 2N5165A, RELEASE5700, 2N5165, 2N5165, 2N5165, 5961-00-233-7193, 00-233-7193, 5961002337193, 002337193

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 12, 197100-233-719333096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-233-7193
Part Number Cage Code Manufacturer
2N5165C7191ADELCO ELEKTRONIK GMBH
2N5165AC7191ADELCO ELEKTRONIK GMBH
RELEASE570080131ELECTRONIC INDUSTRIES ASSOCIATION
2N516580131ELECTRONIC INDUSTRIES ASSOCIATION
2N516504713FREESCALE SEMICONDUCTOR, INC.
2N516566844POWEREX, INC
Technical Data | NSN 5961-00-233-7193
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC200.0 MAXIMUM BREAKOVER VOLTAGE, DC
CURRENT RATING PER CHARACTERISTICAC7.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAE0.5 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 CASE
OVERALL LENGTH0.385 INCHES MAXIMUM
OVERALL DIAMETER0.503 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA80131-RELESE5700 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION