NSN 5961-00-234-0198
Part Details | TRANSISTOR
5961-00-234-0198 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2600, 2N2600, 2N2600, 2N2600, 2N2600, 10668660, 5961-00-234-0198, 00-234-0198, 5961002340198, 002340198
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | NOV 02, 1970 | 00-234-0198 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-234-0198
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2600 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N2600 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N2600 | 31338 | SEMITRONICS CORP |
| 2N2600 | 30043 | SOLID STATE DEVICES, INC. |
| 2N2600 | 21845 | SOLITRON DEVICES, INC. |
| 10668660 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-234-0198
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM125.0 MAXIMUM AND CA+80.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AABBF25.00 AMPERES NOMINAL AND AABBL5.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF4.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.070 INCHES NOMINAL |
| OVERALL DIAMETER | 0.220 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |