NSN 5961-00-240-2319

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-240-2319 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: 5800583926210.230, 5800583-926210.230, 5039491, 5039-491, Q317816002, Q 317 816 001, SBR05, SBR1, SBR1, 5961-00-240-2319, 00-240-2319, 5961002402319, 002402319

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 31, 196900-240-231962108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-00-240-2319
Part Number Cage Code Manufacturer
5800583-926210.230C0426HENSOLDT SENSORS GMBH
5039-49105869RAYTHEON COMPANYDBA RAYTHEON
Q317816002S3092RHEINMETALL AIR DEFENCE AG
Q 317 816 001S3092RHEINMETALL AIR DEFENCE AG
SBR0514099SEMTECH CORPORATION
SBR114099SEMTECH CORPORATION
SBR1SH879SEMTECH CORPUS CHRISTI.A. DE C.V.REYNOSA FACILITY
Technical Data | NSN 5961-00-240-2319
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 PEAK INVERSE VOLTAGE
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-55.0 TO +150.0 DEG CELSIUS
OVERALL LENGTH0.620 INCHES NOMINAL
OVERALL WIDTH0.420 INCHES NOMINAL
OVERALL HEIGHT0.180 INCHES NOMINAL