NSN 5961-00-246-2453

Part Details | TRANSISTOR

5961-00-246-2453 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5194A, 2N5194, 2N5194, RELEASE5751, 2N5194, 18530212, 1853-0212, 2N5194, 5961-00-246-2453, 00-246-2453, 5961002462453, 002462453

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 26, 196900-246-245320588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-246-2453
Part Number Cage Code Manufacturer
2N5194AC7191ADELCO ELEKTRONIK GMBH
2N5194C7191ADELCO ELEKTRONIK GMBH
2N519480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE575180131ELECTRONIC INDUSTRIES ASSOCIATION
2N519404713FREESCALE SEMICONDUCTOR, INC.
1853-021228480HEWLETT-PACKARD COMPANYDBA HP
2N519434428UNITED PAGE INC
Technical Data | NSN 5961-00-246-2453
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB1.00 AMPERES MAXIMUM AND AC4.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB40.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.595 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.450 INCHES MAXIMUM
OVERALL DIAMETER0.330 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE5194 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION