NSN 5961-00-246-8688

Part Details | TRANSISTOR

5961-00-246-8688 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 18500115, 1850-0115, 2N1755, RELEASE3324, 2N1755, 18500115, 1850-0115, 2N1755, 2N1755, 5961-00-246-8688, 00-246-8688, 5961002468688, 002468688

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 14, 196900-246-868820588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-246-8688
Part Number Cage Code Manufacturer
1850-01151MY97AGILENT TECHNOLOGIES, INC.DIV AGILENT TECHNOLOGIES
2N175580131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE332480131ELECTRONIC INDUSTRIES ASSOCIATION
2N175512045ELECTRONIC TRANSISTORS CORP
1850-011528480HEWLETT-PACKARD COMPANYDBA HP
2N175514433ITT SEMICONDUCTORS DIV
2N175507256SILICON TRANSISTOR CORPSUB OF BBF INC
Technical Data | NSN 5961-00-246-8688
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
INTERNAL JUNCTION CONFIGURATION PNP
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB2.00 AMPERES MAXIMUM AND AC3.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB28.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL TYPE AND QUANTITY2 PIN AND 1 CASE
OVERALL LENGTH0.199 INCHES NOMINAL
OVERALL DIAMETER0.789 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE3324 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION