NSN 5961-00-250-2408
Part Details | TRANSISTOR
5961-00-250-2408 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 50211600, 2N4916A, 2N4916, 18534916, 1853-4916, CH74336, 26010160, 516147059, 516147-059, RELEASE5476, 2N4916, 2N4916, 2N3916, 2N4916, 2N4916, 2N4916, 2N4916, 2N4916, 2N3916, 16769142001, 16769142-001, 9149160, 91-49-160, 2N4916, 5961-00-250-2408, 00-250-2408, 5961002502408, 002502408
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | NOV 18, 1969 | 00-250-2408 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-250-2408
Part Number | Cage Code | Manufacturer |
---|---|---|
50211600 | 97384 | AAI CORPORATIONDBA TEXTRON SYSTEMS |
2N4916A | C7191 | ADELCO ELEKTRONIK GMBH |
2N4916 | C7191 | ADELCO ELEKTRONIK GMBH |
1853-4916 | 33783 | BR COMMUNICATIONS INC |
CH74336 | 34423 | CLARKE HESS COMMUNICATION RESEARCHCORP |
26010160 | 30669 | E AND R ELECTRONICS INCDBA DUMONT OSCILLOSCOPE |
516147-059 | 88869 | EATON CORPELECTRONIC INSTRUMENTATION DIV |
RELEASE5476 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N4916 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N4916 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
2N3916 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N4916 | 54485 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI LAWRENCE |
2N4916 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
2N4916 | 12040 | NATIONAL SEMICONDUCTOR CORP |
2N4916 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
2N4916 | 31338 | SEMITRONICS CORP |
2N3916 | 04454 | SENSOR SYSTEMS, L.L.C. |
16769142-001 | 28009 | SYPRIS ELECTRONICS, LLCDIV SYPRIS ELECTRONICS, LLC - |
91-49-160 | 28009 | SYPRIS ELECTRONICS, LLCDIV SYPRIS ELECTRONICS, LLC - |
2N4916 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-250-2408
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC100.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB200.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.400 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.250 INCHES MAXIMUM |
OVERALL DIAMETER | 0.330 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |