NSN 5961-00-250-8591

Part Details | TRANSISTOR

5961-00-250-8591 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: DMS 81016B, 60033001, 600330-01, 2N5764, RELEASE6059, 9281411, 928141-1, SD1545, 2N5764, PRT8526, 5961-00-250-8591, 00-250-8591, 5961002508591, 002508591

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 09, 197200-250-859120588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-250-8591
Part Number Cage Code Manufacturer
DMS 81016B16236DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL
600330-0109017EDO
2N576480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE605980131ELECTRONIC INDUSTRIES ASSOCIATION
928141-182577RAYTHEON COMPANYDBA RAYTHEON
SD154557962STMICROELECTRONICS INC
2N576401281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
PRT852601281TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES
Technical Data | NSN 5961-00-250-8591
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB250.00 MILLIAMPERES MAXIMUM AND AC750.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB10.0 WATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.265 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY4 FERRULE
OVERALL LENGTH0.657 INCHES MAXIMUM
OVERALL DIAMETER0.285 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN