NSN 5961-00-251-9112
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-251-9112 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 322MT080P002, 322MT080P002, 322MT080P002, 5961-00-251-9112, 00-251-9112, 5961002519112, 002519112
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1969 | 00-251-9112 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-251-9112
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 322MT080P002 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322MT080P002 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 322MT080P002 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-251-9112
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
| CURRENT RATING PER CHARACTERISTIC | CC20.00 AMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-5 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 1 TAB, SOLDER LUG |
| OVERALL WIDTH ACROSS FLATS | 0.688 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
