NSN 5961-00-252-1325

Part Details | TRANSISTOR

5961-00-252-1325 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 309431, 30943-1, 30943, RELEASE5012, 2N3685, 2N3685, 2N3685, 2N3685, 2N3685, 2N3685, 2N3685, 2N3685, 5961-00-252-1325, 00-252-1325, 5961002521325, 002521325

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59FEB 21, 196900-252-132520588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-252-1325
Part Number Cage Code Manufacturer
30943-114058DEWEY ELECTRONICS CORPORATION, THE
3094314058DEWEY ELECTRONICS CORPORATION, THE
RELEASE501280131ELECTRONIC INDUSTRIES ASSOCIATION
2N368580131ELECTRONIC INDUSTRIES ASSOCIATION
2N368507263FAIRCHILD SEMICONDUCTOR CORP
2N368512040NATIONAL SEMICONDUCTOR CORP
2N368527014NATIONAL SEMICONDUCTOR CORPORATION
2N368517856SILICONIX INCORPORATEDDIV SILICONIX
2N368521845SOLITRON DEVICES, INC.
2N368515818TELCOM SEMICONDUCTOR INC
2N368505397UNION CARBIDE CORP MATERIALS SYSTEMSDIV
Technical Data | NSN 5961-00-252-1325
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE
CURRENT RATING PER CHARACTERISTICAD3.00 MILLIAMPERES MAXIMUM AND AK50.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB150.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY4 PIN
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIFICATION/STANDARD DATA80131-RELESE5012 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION