NSN 5961-00-254-1123
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-254-1123 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: RELEASE5515, 1N5299, 1N5299, JAN1N5299, 3530426170, 353-0426-170, 5961-00-254-1123, 00-254-1123, 5961002541123, 002541123
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUN 27, 1973 | 00-254-1123 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-254-1123
Part Number | Cage Code | Manufacturer |
---|---|---|
RELEASE5515 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N5299 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
1N5299 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
JAN1N5299 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
353-0426-170 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
Technical Data | NSN 5961-00-254-1123
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM FORWARD VOLTAGE, AVERAGE |
CURRENT RATING PER CHARACTERISTIC | CH1.20 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AG600.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | GLASS |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-204AA |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.250 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.265 INCHES NOMINAL |
OVERALL DIAMETER | 0.096 INCHES NOMINAL |
FUNCTION FOR WHICH DESIGNED | CURRENT REGULATOR |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIFICATION/STANDARD DATA | 80131-RELESE5515 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |