NSN 5961-00-255-9986
Part Details | TRANSISTOR
5961-00-255-9986 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6258, 2N6258A, RELEASE6317, 2N6258, 2N6258, 2N6258, 273.617 035, C46782, C4678-2, 2N6258, 2N6258, 2N6258, 3520829020, 352-0829-020, 3520829020, 352-0829-020, 2N6258, 2N6258, 209285020, 209285-020, 2N6258, 5961-00-255-9986, 00-255-9986, 5961002559986, 002559986
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) | 
|---|---|---|---|
| 59 | JUN 27, 1973 | 00-255-9986 | 20588 ( TRANSISTOR ) | 
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-255-9986
| Part Number | Cage Code | Manufacturer | 
|---|---|---|
| 2N6258 | C7191 | ADELCO ELEKTRONIK GMBH | 
| 2N6258A | C7191 | ADELCO ELEKTRONIK GMBH | 
| RELEASE6317 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 
| 2N6258 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 
| 2N6258 | 1MY79 | INTERSIL COMMUNICATIONS INC. | 
| 2N6258 | 34371 | INTERSIL CORPORATIONDIV NA | 
| 273.617 035 | D3683 | JENOPTIK ADVANCED SYSTEMS GMBHDIV JENOPTIK DEFENSE AND CIVIL | 
| C4678-2 | 81755 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN AERONAUTICS | 
| 2N6258 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE | 
| 2N6258 | 33178 | MICROSEMI PPC INC | 
| 2N6258 | 14321 | PD & E ELECTRONICS LLC | 
| 352-0829-020 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS | 
| 352-0829-020 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS | 
| 2N6258 | 31338 | SEMITRONICS CORP | 
| 2N6258 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC | 
| 209285-020 | 89022 | TDK-LAMBDA AMERICAS INC.DIV HIGH POWER DIVISION | 
| 2N6258 | C0237 | TRANSITRON ELECTRONIC GMBH | 
Technical Data | NSN 5961-00-255-9986
| Characteristic | Specifications | 
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON | 
| INTERNAL CONFIGURATION | JUNCTION CONTACT | 
| INTERNAL JUNCTION CONFIGURATION | NPN | 
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | 
| CURRENT RATING PER CHARACTERISTIC | AB7.50 AMPERES MAXIMUM AND AC30.00 AMPERES MAXIMUM | 
| POWER RATING PER CHARACTERISTIC | AE250.0 WATTS MAXIMUM | 
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION | 
| INCLOSURE MATERIAL | METAL | 
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | 
| MOUNTING METHOD | UNTHREADED HOLE | 
| MOUNTING FACILITY QUANTITY | 2 | 
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE | 
| OVERALL LENGTH | 0.450 INCHES MAXIMUM | 
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM | 
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM | 
| FEATURES PROVIDED | HERMETICALLY SEALED CASE | 
| SPECIFICATION/STANDARD DATA | 80131-RELESE6317 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | 
