NSN 5961-00-256-1222
Part Details | TRANSISTOR
5961-00-256-1222 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80069B, Q1011, Q101-1, Q1011, Q101-1, M100, 5961-00-256-1222, 00-256-1222, 5961002561222, 002561222
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 19, 1971 | 00-256-1222 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-256-1222
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| DMS 80069B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| Q101-1 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| Q101-1 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
| M100 | D9816 | WIMA SPEZIALVERTRIEBELEKTRONISCHERBAUELEMENTE GMBH & |
Technical Data | NSN 5961-00-256-1222
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| POWER RATING PER CHARACTERISTIC | AB300.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
