NSN 5961-00-258-5077
Part Details | TRANSISTOR
5961-00-258-5077 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 5372092, 537209-2, 5961-00-258-5077, 00-258-5077, 5961002585077, 002585077
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 29, 1973 | 00-258-5077 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-258-5077
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 537209-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-258-5077
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND 35.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 4.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS |
| CURRENT RATING PER CHARACTERISTIC | AC3.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB80.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.164 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 0.275 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.385 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
