NSN 5961-00-260-1669
Part Details | TRANSISTOR
5961-00-260-1669 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 117127, 2N1304, 5961-00-260-1669, 00-260-1669, 5961002601669, 002601669
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAR 19, 1971 | 00-260-1669 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-260-1669
Part Number | Cage Code | Manufacturer |
---|---|---|
117127 | 89536 | FLUKE CORPORATION |
2N1304 | 53399 | GPD OPTOELECTRONICS CORP.DIV GPD OPTOELECTRONICS |
Technical Data | NSN 5961-00-260-1669
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | GERMANIUM |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AC300.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF150.0 MILLIWATTS MAXIMUM |
TRANSFER RATIO | 40.0 MAXIMUM SMALL-SIGNAL SHORT-CIRCUIT FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |