NSN 5961-00-260-2615
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-260-2615 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: Q68000A253F72, Q68000A253F72, FDN400, FDH400, 5800583926201206, 5800583-926201-206, 770101700, 7701017-00, 77S1017000, 77S1017-000, 5961-00-260-2615, 00-260-2615, 5961002602615, 002602615
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 26, 1971 | 00-260-2615 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-260-2615
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| Q68000A253F72 | C4751 | EPCOS AG |
| Q68000A253F72 | D1180 | EPCOS AG ABT. PR ROE K PM |
| FDN400 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| FDH400 | 13715 | FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP |
| 5800583-926201-206 | C0426 | HENSOLDT SENSORS GMBH |
| 7701017-00 | 4S536 | UNISYS CORPFEDERAL SYSTEMS DIV |
| 77S1017-000 | 4S536 | UNISYS CORPFEDERAL SYSTEMS DIV |
Technical Data | NSN 5961-00-260-2615
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 85.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CH50.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF500.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.180 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.075 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | MINIMUM VOLTAGE |
