NSN 5961-00-261-6767

Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER

5961-00-261-6767 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.

Alternate Parts: PB40, 5961-00-261-6767, 00-261-6767, 5961002616767, 002616767

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUN 27, 197300-261-676762108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED )
REFERENCE DRAWINGS & PICTURES

BRIDGE 1 PHASE

Cross Reference | NSN 5961-00-261-6767
Part Number Cage Code Manufacturer
PB4083701ELECTRONIC DEVICES INCDBA E D I
Technical Data | NSN 5961-00-261-6767
Characteristic Specifications
MATERIAL SILICON
ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC100.0 PEAK INVERSE VOLTAGE
ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC75.00 AMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE
MOUNTING METHOD UNTHREADED HOLE
TERMINAL TYPE AND QUANTITY4 TAB, SOLDER LUG
CIRCUIT CONNECTION STYLE DESIGNATOR BRIDGE 1 PHASE
OPERATING TEMP RANGE-54.0 TO +71.0 DEG CELSIUS
OVERALL LENGTH1.125 INCHES NOMINAL
OVERALL WIDTH1.125 INCHES NOMINAL
OVERALL HEIGHT1.102 INCHES NOMINAL