NSN 5961-00-261-6812
Part Details | TRANSISTOR
5961-00-261-6812 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: H21263, SS5024H2, 928350101, 928350-101, 5961-00-261-6812, 00-261-6812, 5961002616812, 002616812
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUL 04, 1973 | 00-261-6812 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-261-6812
Part Number | Cage Code | Manufacturer |
---|---|---|
H21263 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
SS5024H2 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
928350-101 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-261-6812
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -300.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND -300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS |
CURRENT RATING PER CHARACTERISTIC | ACM50.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB1.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
PRECIOUS MATERIAL | GOLD |
PRECIOUS MATERIAL AND LOCATION | LEADS GOLD |