NSN 5961-00-261-6930
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-261-6930 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: D220001000, D22-0001-000, 1N4003, D220001000, D22-0001-000, 1N4003, D220001000, D22-0001-000, 1N4003, D220001000, D22-0001-000, 1N4003, 5961-00-261-6930, 00-261-6930, 5961002616930, 002616930
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUL 04, 1973 | 00-261-6930 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-261-6930
Part Number | Cage Code | Manufacturer |
---|---|---|
D22-0001-000 | 72982 | ERIE SPECIALTY PRODUCTS INC |
1N4003 | 72982 | ERIE SPECIALTY PRODUCTS INC |
D22-0001-000 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
1N4003 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
D22-0001-000 | 14304 | HARRIS CORPORATIONDBA HARRIS RF COMMUNICATION |
1N4003 | 12294 | MURATA ERIE NORTH AMERICA INC DIVOFMURATA ERIE |
D22-0001-000 | 14099 | SEMTECH CORPORATION |
1N4003 | 14099 | SEMTECH CORPORATION |
Technical Data | NSN 5961-00-261-6930
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 200.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | CG1.00 AMPERES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.100 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.255 INCHES MAXIMUM |
OVERALL DIAMETER | 0.128 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |