NSN 5961-00-262-0315
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-262-0315 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 694037103, 694037-103, 700224, 1N21C, 1N21C, MILR1, 3221007P2, 322-1007P2, 3221007P2, 322-1007P2, 5961-00-262-0315, 00-262-0315, 5961002620315, 002620315
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-262-0315 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-262-0315
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 694037-103 | 12436 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION INC. |
| 700224 | 28527 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED |
| 1N21C | 80058 | JOINT ELECTRONICS TYPE DESIGNATIONSYSTEM |
| 1N21C | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| MILR1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 322-1007P2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322-1007P2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-262-0315
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| NONDEFINITIVE SPEC/STD DATA | 1N21C TYPE |
