NSN 5961-00-264-4875
Part Details | TRANSISTOR
5961-00-264-4875 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6055A, 2N6055, RELEASE6342, JEDEC2N6055, 2N6055, 2N6055, 2N6055935, 2N60559-35, 2N6055, 18540611, 1854-0611, 18540611, 1854-0611, JANTX2N6055, 2N6055, 2N6053, 2N6055, W5051634WS, 2N6055, W5051634WS, 0448180006, 5961-00-264-4875, 00-264-4875, 5961002644875, 002644875
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 13, 1973 | 00-264-4875 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-264-4875
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6055A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N6055 | C7191 | ADELCO ELEKTRONIK GMBH |
| RELEASE6342 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| JEDEC2N6055 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6055 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N6055 | 92037 | ESSNER PRECISION MANUFACTURING LLCDBA PRECISION MANUFACTURING COMPANY |
| 2N60559-35 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N6055 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1854-0611 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1854-0611 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| JANTX2N6055 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N6055 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N6053 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N6055 | 22887 | OAI ELECTRONICS, LLC |
| W5051634WS | S3118 | OERLIKON-BUEHRLE AGWERKZEUGMASCHINENFABRIK |
| 2N6055 | 5V1P1 | ON SEMICONDUCTOR CORPORATION |
| W5051634WS | S3092 | RHEINMETALL AIR DEFENCE AG |
| 0448180006 | 12338 | RIIMIC, LLCDBA SUNAIR ELECTRONICS |
Technical Data | NSN 5961-00-264-4875
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB120.00 MILLIAMPERES MAXIMUM AND AC8.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB100.0 WATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS CASE |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
| OVERALL LENGTH | 0.375 INCHES NOMINAL |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6342 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
