NSN 5961-00-272-8477
Part Details | TRANSISTOR
5961-00-272-8477 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N3585, JANTX2N3585A, L03004, JAN2N3585, 5961PL1373546, 2N3585, 2N3585, JANTX2N3585, 790897501, 7908975-01, 40313, JANTX2N3585, TX2N3585, MILPRF19500384, MIL-PRF-19500/384, JAN2N3585, JANTX2N3585, JANTX2N3585, 352250009602, 5961-00-272-8477, 00-272-8477, 5961002728477, 002728477
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JUL 30, 1973 | 00-272-8477 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-272-8477
Part Number | Cage Code | Manufacturer |
---|---|---|
JANTX2N3585 | C7191 | ADELCO ELEKTRONIK GMBH |
JANTX2N3585A | C7191 | ADELCO ELEKTRONIK GMBH |
L03004 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
JAN2N3585 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
5961PL1373546 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
2N3585 | 3GW96 | IT ENTERPRISE |
2N3585 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
JANTX2N3585 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
7908975-01 | 90536 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
40313 | 49671 | LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN |
JANTX2N3585 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
TX2N3585 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
MIL-PRF-19500/384 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JAN2N3585 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JANTX2N3585 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
JANTX2N3585 | 07256 | SILICON TRANSISTOR CORPSUB OF BBF INC |
352250009602 | H0203 | THALES NEDERLANDDBA THALES LAND & JOINT SYSTEMS |
Technical Data | NSN 5961-00-272-8477
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 500.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 300.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 400.0 MAXIMUM COLLECTOR TO EMITTER REVERSE VOLTAGE AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB1.00 AMPERES MAXIMUM AND AC2.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AG2.5 WATTS NOMINAL |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
MOUNTING METHOD | UNTHREADED HOLE |
MOUNTING FACILITY QUANTITY | 2 |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD AND 1 CASE |
OVERALL LENGTH | 0.250 INCHES MINIMUM AND 0.340 INCHES MAXIMUM |
OVERALL DIAMETER | 0.620 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL--19500 TO 384 GOVERNMENT SPECIFICATION |