NSN 5961-00-275-7574
Part Details | TRANSISTOR
5961-00-275-7574 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5680, 2N5680A, 2N5680, 2N5680, RELEASE5963, 2N5680, 2N5680, 2139644G001, 5961PL0592320, 2N5680L, 2N5680, 2557723635, 25577-23635, 2N5680, 84000721002, 84000721-002, 1686613, 1686-613, 5961-00-275-7574, 00-275-7574, 5961002757574, 002757574
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | AUG 08, 1973 | 00-275-7574 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-275-7574
Part Number | Cage Code | Manufacturer |
---|---|---|
2N5680 | 03864 | AAI/ACL TECHNOLOGIES INCIM AND C DIV |
2N5680A | C7191 | ADELCO ELEKTRONIK GMBH |
2N5680 | C7191 | ADELCO ELEKTRONIK GMBH |
2N5680 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
RELEASE5963 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
2N5680 | F4597 | FREESCALE SEMICONDUCTEURS FRANCESAS |
2N5680 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2139644G001 | 28527 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, INTEGRATED |
5961PL0592320 | 9009H | INSPEKTORAT WSPARCIA SIL ZBROJNYCH |
2N5680L | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
2N5680 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
25577-23635 | 30377 | SMITHS AEROSPACE INC. ELECTRONICSYSTEMS-GRAND RAPIDS |
2N5680 | 21845 | SOLITRON DEVICES, INC. |
84000721-002 | 81873 | WOODWARD HRT, INC. |
1686-613 | 31361 | WOODWARD, INC.DBA INDUSTRIAL PRODUCTS GROUP |
Technical Data | NSN 5961-00-275-7574
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | AB500.00 MILLIAMPERES MAXIMUM AND AC1.00 AMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB1.0 WATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |