NSN 5961-00-278-9632
Part Details | TRANSISTOR
5961-00-278-9632 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 42959701, 429597-01, 2N4091, 2N4091, 2N4091, 2N4091, 2N4091, 2N4091, 5961-00-278-9632, 00-278-9632, 5961002789632, 002789632
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | AUG 10, 1973 | 00-278-9632 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-278-9632
Part Number | Cage Code | Manufacturer |
---|---|---|
429597-01 | 07690 | BAE SYSTEMS CONTROLS INC |
2N4091 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
2N4091 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION |
2N4091 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
2N4091 | 21845 | SOLITRON DEVICES, INC. |
2N4091 | 15818 | TELCOM SEMICONDUCTOR INC |
2N4091 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-278-9632
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 40.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 40.0 MAXIMUM GATE TO SOURCE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | BS10.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF1.8 WATTS MAXIMUM |
INCLOSURE MATERIAL | METAL |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |