NSN 5961-00-296-0159
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-296-0159 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 8024445, 1N67A, 1N67A, 3530147000, 353-0147-000, 353014700, 353-0147-00, SMB189595, SMA189595, 5961-00-296-0159, 00-296-0159, 5961002960159, 002960159
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | JAN 01, 1963 | 00-296-0159 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-296-0159
Part Number | Cage Code | Manufacturer |
---|---|---|
8024445 | 19204 | ARMY, UNITED STATES DEPARTMENT OFTHE |
1N67A | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
1N67A | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
353-0147-000 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
353-0147-00 | 95105 | ROCKWELL COLLINS, INC.DIV GOVERNMENT SYSTEMS - DALLAS |
SMB189595 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
SMA189595 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-00-296-0159
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | GERMANIUM |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM REVERSE VOLTAGE, PEAK |
CURRENT RATING PER CHARACTERISTIC | AF4.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AF80.0 MILLIWATTS MAXIMUM |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.265 INCHES MAXIMUM |
OVERALL DIAMETER | 0.105 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |