NSN 5961-00-296-8834

Part Details | DIODE SEMICONDUCTOR DEVICE

5961-00-296-8834 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.

Alternate Parts: JAN1N4500A, Q68000A5890Z, Q68000-A5890-Z, Q68000A5890Z, Q68000-A5890-Z, MILS19500403, MIL-S-19500/403, MILPRF19500403, MIL-PRF-19500/403, JAN1N4500, 1N4500, 4178600558, 4178600-558, 5961-00-296-8834, 00-296-8834, 5961002968834, 002968834

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59OCT 03, 197300-296-883420589 ( SEMICONDUCTOR DEVICE, DIODE )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-296-8834
Part Number Cage Code Manufacturer
JAN1N4500AC7191ADELCO ELEKTRONIK GMBH
Q68000-A5890-ZC4751EPCOS AG
Q68000-A5890-ZD1180EPCOS AG ABT. PR ROE K PM
MIL-S-19500/40381349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
MIL-PRF-19500/40381349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
JAN1N450081349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
1N450081349MILITARY SPECIFICATIONSPROMULGATED BY MILITARY
4178600-55805869RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-296-8834
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC80.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 75.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE
CURRENT RATING PER CHARACTERISTICCG300.00 MILLIAMPERES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT175.0 DEG CELSIUS AMBIENT AIR
INCLOSURE MATERIAL GLASS
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.000 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD
OVERALL LENGTH0.300 INCHES MAXIMUM
OVERALL DIAMETER0.107 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE