NSN 5961-00-325-5697

Part Details | TRANSISTOR

5961-00-325-5697 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5356, 2N5356, 2N5356, RELEASE5791, 2N5356, 2N5356, EGS319, 2N5356, 5961-00-325-5697, 00-325-5697, 5961003255697, 003255697

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59DEC 03, 197300-325-569720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-325-5697
Part Number Cage Code Manufacturer
2N535631637BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I
2N5356K0577BRITISH SAROZAL LTD
2N535680131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE579180131ELECTRONIC INDUSTRIES ASSOCIATION
2N535603508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2N535613688MARTIN MARIETTA CORPELECTRONICS LABORATORY
EGS31958880MEGGITT (NEW HAMPSHIRE), INC
2N535630043SOLID STATE DEVICES, INC.
Technical Data | NSN 5961-00-325-5697
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAC500.00 MILLIAMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB360.0 MILLIWATTS MAXIMUM
INCLOSURE MATERIAL PLASTIC
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.265 INCHES MAXIMUM
OVERALL DIAMETER0.205 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP