NSN 5961-00-342-3667
Part Details | TRANSISTOR
5961-00-342-3667 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N4047A, 2N4047, 414047, 41-4047, 150404, 150-404, 1500404, 150-0404, 2N4047, RELEASE5200A, 531233009, 531-233-009, 531233009, 531-233-009, 2N4047, 2N4047, 2N4046, 2N4047, 2N4047, 2N4047, 2N4047, 2N4047, 150404, 150-404, 99075999, 4901040470, 4901-04-0470, 5961-00-342-3667, 00-342-3667, 5961003423667, 003423667
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 15, 1974 | 00-342-3667 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-342-3667
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N4047A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N4047 | C7191 | ADELCO ELEKTRONIK GMBH |
| 41-4047 | 95750 | AIRCO REPUBLIC ELECTRONICS, INC.DBA AERONAUTICAL INSTRUMENT AND |
| 150-404 | 54817 | AUTEK SYSTEMS CORP |
| 150-0404 | 54817 | AUTEK SYSTEMS CORP |
| 2N4047 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5200A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 531-233-009 | C3141 | ELETTRONICA GMBH |
| 531-233-009 | A1997 | ELETTRONICA SPA |
| 2N4047 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N4047 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N4046 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 2N4047 | 34371 | INTERSIL CORPORATIONDIV NA |
| 2N4047 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N4047 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N4047 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N4047 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 150-404 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
| 99075999 | F6481 | THALES SA |
| 4901-04-0470 | 23338 | WAVETEK U S INCDIV OF WAVETEK CORP |
Technical Data | NSN 5961-00-342-3667
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC500.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB800.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5200 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
