NSN 5961-00-345-7666
Part Details | TRANSISTOR
5961-00-345-7666 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4805192864, 4805-192864, DF60526T, FN323, F2792, 5961-00-345-7666, 00-345-7666, 5961003457666, 003457666
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 17, 1968 | 00-345-7666 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-345-7666
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4805-192864 | 89536 | FLUKE CORPORATION |
| DF60526T | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| FN323 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| F2792 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-345-7666
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM BREAKDOWN VOLTAGE, DC AND 1.5 MAXIMUM GATE TO SOURCE VOLTAGE AND 6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE |
| CURRENT RATING PER CHARACTERISTIC | BW30.00 NANOAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AG300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-18 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
