NSN 5961-00-350-1912
Part Details | TRANSISTOR
5961-00-350-1912 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 181614, 18-161-4, 181614, 18-161-4, 5961-00-350-1912, 00-350-1912, 5961003501912, 003501912
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 1970 | 00-350-1912 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-350-1912
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 18-161-4 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 18-161-4 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-350-1912
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC25.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB600.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | VOLTAGE RATING IS MINIMUM; JUNCTION PATTERN ARRANGEMENT: NPN |
