NSN 5961-00-350-1962
Part Details | UNITIZED SEMICONDUCTOR DEVICE RECTIFIER
5961-00-350-1962 Two or more diode semiconductor devices designed to function as a unit in changing alternating current to direct current. The diode devices are internally connected in series, and are permanently cased, encapsulated, potted, or molded together to form an inseparable unit. These units may be designed as either half-wave or full-wave rectifiers and may be mounted to form either single phase or three phase bridges. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items fabricated in the form of a monolithic or thin film structure that perform the function of a circuit, see INTEGRATED CIRCUIT (as modified). Excludes SEMICONDUCTOR DEVICES, UNITIZED; SEMICONDUCTOR DEVICE ASSEMBLY; and RECTIFIER NETWORK, UNITIZED.
Alternate Parts: MDA15916, MDA1591-6, XP3296, XP329-6, 5961-00-350-1962, 00-350-1962, 5961003501962, 003501962
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 18, 1970 | 00-350-1962 | 62108 ( RECTIFIER, SEMICONDUCTOR DEVICE, UNITIZED ) |
REFERENCE DRAWINGS & PICTURES
BRIDGE 1 PHASE
Cross Reference | NSN 5961-00-350-1962
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| MDA1591-6 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| XP329-6 | 51589 | ST-SEMICON INC |
Technical Data | NSN 5961-00-350-1962
| Characteristic | Specifications |
|---|---|
| MATERIAL | SILICON |
| ABSOLUTE MAXIMUM VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 600.0 PEAK INVERSE VOLTAGE AND 420.0 FORWARD VOLTAGE, TOTAL RMS |
| ABSOLUTE MAXIMUM CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES FORWARD CURRENT, DC AND 125.00 AMPERES PEAK FORWARD SURGE CURRENT |
| MOUNTING METHOD | BASE |
| TERMINAL TYPE AND QUANTITY | 1 STANDARD TUBE BASE |
| CIRCUIT CONNECTION STYLE DESIGNATOR | BRIDGE 1 PHASE |
| OPERATING TEMP RANGE | -65.0 TO +125.0 DEG CELSIUS |
| OVERALL HEIGHT | 0.688 INCHES MINIMUM AND 0.812 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.250 INCHES NOMINAL |
