NSN 5961-00-350-8240

Part Details | TRANSISTOR

5961-00-350-8240 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N5036, RELEASE5543, 2N5036, 2N5036, 2N5036, TLA702, TLA70-2, 2N5036, 2N5036, 2N5037, 5961-00-350-8240, 00-350-8240, 5961003508240, 003508240

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59MAR 25, 197000-350-824020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-350-8240
Part Number Cage Code Manufacturer
2N503680131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE554380131ELECTRONIC INDUSTRIES ASSOCIATION
2N50361MY79INTERSIL COMMUNICATIONS INC.
2N503634371INTERSIL CORPORATIONDIV NA
2N503607688JOINT ELECTRON DEVICE ENGINEERINGCOUNCIL
TLA70-273293L-3 COMMUNICATIONS ELECTRONTECHNOLOGIES, INC.
2N503649671LOCKHEED MARTIN CORPORATIONDBA LOCKHEED MARTIN
2N503695306RCA CORP PICTURE TUBE DIV
2N503726720RCA CORPNEW PRODUCTS DIV
Technical Data | NSN 5961-00-350-8240
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC70.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CURRENT RATING PER CHARACTERISTICAB12.00 AMPERES MAXIMUM AND AC8.00 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB666.0 MILLIWATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL PLASTIC
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.560 INCHES MAXIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.910 INCHES MAXIMUM
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN