NSN 5961-00-350-8299
Part Details | TRANSISTOR
5961-00-350-8299 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5245A, 2N5245, A3096, 2N5245, 5961003508299, RELEASE5617, 2N5245, 2N5245, 18550081, 1855-0081, 18550081, 1855-0081, 2N5245, P58005762002, P58-005762-002, 40185800701, 4018580-0701, 3030140, 303-0140, 2N5245, 2N5245, 2N5245, P58005762002, P58-005762-002, 5961-00-350-8299, 00-350-8299, 5961003508299, 003508299
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 25, 1970 | 00-350-8299 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-350-8299
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5245A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N5245 | C7191 | ADELCO ELEKTRONIK GMBH |
| A3096 | 81535 | AERONAUTICAL COMMUNICATIONSEQUIPMENT INC |
| 2N5245 | 27622 | BURNS AND TOWNE INC |
| 5961003508299 | SCY13 | E.C.A ETABLISSEMENTCENTRALD'APPROVISIONNEMENT DES |
| RELEASE5617 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5245 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5245 | 14447 | GENERAL MACHINERY CO |
| 1855-0081 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1855-0081 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. |
| 2N5245 | 12040 | NATIONAL SEMICONDUCTOR CORP |
| P58-005762-002 | 63103 | PULTZ JOHN M CO INC |
| 4018580-0701 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 303-0140 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N5245 | K0461 | RAYTHEON SYSTEMS LTD WEAPONSSUPPORT GROUP |
| 2N5245 | 15818 | TELCOM SEMICONDUCTOR INC |
| 2N5245 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
| P58-005762-002 | 32791 | THOMSON MULTIMEDIA BROADCASTSOLUTIONS INC |
Technical Data | NSN 5961-00-350-8299
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE |
| POWER RATING PER CHARACTERISTIC | AB360.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.205 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.165 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5617 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
