NSN 5961-00-353-3278
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-353-3278 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N1400, RELEASE2574, 1N1400, F0000195, F00001-95, 900116300, 9001-16-300, 5961-00-353-3278, 00-353-3278, 5961003533278, 003533278
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 06, 1974 | 00-353-3278 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-353-3278
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N1400 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2574 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N1400 | 14433 | ITT SEMICONDUCTORS DIV |
| F00001-95 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 9001-16-300 | 93929 | SPX CORPORATIONDBA RADIODETECTION |
Technical Data | NSN 5961-00-353-3278
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 300.0 NOMINAL REVERSE VOLTAGE, AVERAGE |
| CURRENT RATING PER CHARACTERISTIC | CH30.00 MILLIAMPERES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 190.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL AND GLASS |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.375 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.255 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
